This IC targets dual voltage hot swap applications across the +2. 5V to +3. 3V (nominal) bias supply voltage range with a second lower voltage rail down to less than 1V where a circuit breaker response to an over current event is preferred. It features a charge pump for driving external N-Channel MOSFETs, accurate programmable circuit breaker current thresholds and delay output undervoltage monitoring and reporting and adjustable soft-start. The circuit breaker current level (ICB) for each rail is set by two external resistors, and for each rail a delay (tCB) is set by an external capacitor on the TCB pin. After tCB has expired, the IC then quickly pulls down the associated GATE(s) output turning off its external FET(s).
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类型 | 文档标题 | 日期 |
数据手册 | PDF 775 KB | |
End Of Life Notice | PDF 1.17 MB | |
产品变更通告 | PDF 326 KB | |
白皮书 | PDF 295 KB | |
产品变更通告 | PDF 106 KB | |
产品变更通告 | PDF 173 KB | |
其他 | PDF 2.20 MB | |
应用文档 | PDF 509 KB | |
应用文档 | PDF 397 KB | |
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iSim:PE Offline Simulation Tool iSim Personal Edition (iSim:PE) speeds the design cycle and reduces risk early in any project, identifying parts that can be used in current as well as next-generation designs.
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Simulator | 瑞萨电子 |
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Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.