Overview

Description

The RJP1CS27DWT is a 1250V, 150A, single switch, insulated-gate bipolar transistor (IGBT) with a gate emitter voltage of -30V to 30V, saturated collector emitter voltage of 1.55V, a 150A to 300A DC collector current, and collector emitter voltage of 1250V.

Features

  • Gate emitter voltage: -30V to 30V
  • Saturated collector emitter voltage: 1.55V
  • DC collector current: 150A to 300A
  • Collector emitter voltage 1250V
  • RoHS compliant 

Comparison

Applications

Applications

  • Inverters

Documentation

Design & Development

Models