Overview

Description

The N0607N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance
    RDS(on) = 8.4 mΩ max. ( VGS = 10 V, ID = 32.5 A )
  • Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V )
  • High current : ID(DC) = ±65A
  • RoHS Compliant
  • Quality Grade : Standard

Comparison

Applications

Documentation

Type Title Date
Application Note PDF 648 KB 日本語
Datasheet PDF 661 KB
2 items

Design & Development

Models