The RJH65T46DPQ-A0 650V, 40A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power factor correction (PFC) circuit applications. It is available in a TO-247A package type.
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RJH65T46DPQ-A0#T0 circleActive Samples Available |
TO-247A | Tube | Get Samples, |