Overview

Description

The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance
    RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A)
    RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A)
  • High current rating: ID(DC) = ±110 A

Comparison

Applications

Documentation

Type Title Date
Application Note PDF 3.23 MB 日本語
Application Note PDF 648 KB 日本語
Datasheet PDF 270 KB
3 items

Design & Development

Models