Overview

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 30 A)
  • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 270 KB
Guide PDF 1.71 MB
Product Reliability Report PDF 226 KB
Brochure PDF 2.24 MB
4 items

Design & Development

Models