Overview

Description

The RJP65T43DPQ-A0 650V, 30A trench insulated-gate bipolar transistor (IGBT) offers through hole mounting and comes in a TO-247A package.

Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 20A, VGE = 15V, Ta = 25 °C)
  • Trench gate and thin wafer technology (G7H series)
  • High-speed switching tf = 45ns typ. (at VCC = 400V, VGE = 15V, IC = 20A, Rg = 10Ω, Ta = 25 °C, inductive load)
  • Operation frequency (20kHz ≤ f ˂ 100kHz) Rating of collector current IC = 30A (at Tc = 100 °C)
  • Not guarantee short circuit withstand time

Comparison

Applications

Applications

  • Power Factor Correction (PFC) circuit

Documentation

Design & Development

Models