Wide bandgap semiconductor technologies such as Gallium Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in different applications, from high power motor drives, fast charging adaptors, telecom, computing, to space applications. These devices feature lower Rds(on) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint.

Maximize power density and reliability with Renesas’ portfolio of GaN controllers and drivers for every power level suitable for a wide variety of applications. Log in to your MyRenesas account or register for one to receive new product notifications.

Gallium Nitride (GaN) is a highly efficient, high-performance wide bandgap semiconductor and is among the most promising emerging power technologies. GaN-based power devices significantly outperform traditional silicon devices with faster switching speeds, higher thermal conductivity and lower Rds(on).


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Documentation & Downloads

Title language Type Format File Size Date
Datasheets & Errata
ISL81806 Short-Form Datasheet Short Form Datasheet PDF 216 KB
RAA226110 Datasheet Datasheet PDF 504 KB
Application Notes & White Papers
Taking Advantage of GaN in Small Satellite “New Space” Applications 日本語 White Paper PDF 470 KB
R34AN0001EU: GaN FET Current Increase Due to Heavy Ion Testing Application Note PDF 178 KB
Advantages of Using Gallium NitrideFETs in Satellite Applications White Paper PDF 548 KB
Intersil Space Products Brochure Brochure PDF 3.14 MB
Industrial Power Management Brochure ( R16CL0001EJ0300 ) Brochure PDF 4.22 MB

Boards & Kits

Part Number Title Type Company
RTKA226110DE0010BU GaN E-HEMT 650V/30A, 50mΩ with RAA226110 Gate Driver, 0V Turn-off Voltage Evaluation Board Evaluation Renesas
RTKA226110DE0040BU GaN E-HEMT 650V/60A, 25mΩ with RAA226110 Gate Driver, -3V Turn-off Voltage Evaluation Board Evaluation Renesas