Overview

Description

Renesas' AE4 IGBTs for automotive applications use a unique trench gate configuration in its process structure. These devices achieve low saturation voltage without sacrificing robustness and also have low switching losses. This 1200 V/150 A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.

Features

  • 1200V Trench & field stop AE4 technology
  • Low collector to emitter saturation voltage (1.6V typ.)
  • Low Switching loss
  • Easy paralleling by internal Rg
  • AEC Q101 (HTRB, HTGB) qualified

Comparison

Applications

Applications

  • Hybrid and electric vehicle inverter

Documentation

Type Title Date
Datasheet Log in to Download PDF 139 KB
Application Note PDF 1.11 MB 日本語
Application Note PDF 648 KB 日本語
Application Note PDF 941 KB 日本語
Application Note PDF 1.05 MB 日本語
5 items

Design & Development

Models