Renesas' AE4 IGBTs for automotive applications use a unique trench gate configuration in its process structure. These devices achieve low saturation voltage without sacrificing robustness and also have low switching losses. This 750 V/300 A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.
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Type | Title | Date |
Datasheet | Log in to Download PDF 143 KB | |
Application Note | PDF 1.11 MB 日本語 | |
Application Note | PDF 648 KB 日本語 | |
Application Note | PDF 941 KB 日本語 | |
Application Note | PDF 1.05 MB 日本語 | |
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