The ISL6622 is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. The advanced PWM protocol of ISL6622 is specifically designed to work with Intersil VR11. 1 controllers and combined with N-Channel MOSFETs, form a complete core-voltage regulator solution for advanced microprocessors. When ISL6622 detects a PSI protocol sent by an Intersil VR11. 1 controller, it activates Diode Emulation (DE) and Gate Voltage Optimization Technology (GVOT) operation; otherwise, it operates in normal Continuous Conduction Mode (CCM) PWM mode. In the 8 Ld SOIC package, the ISL6622 drives the upper and lower gates to VCC during normal PWM mode, while the lower gate drops down to a fixed 5. 75V (typically) during PSI mode. The 10 Ld DFN part offers more flexibility: the upper gate can be driven from 5V to 12V via the UVCC pin, while the lower gate has a resistor-selectable drive voltage of 5. 75V, 6. 75V, and 7. 75V (typically) during PSI mode. This provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. To further enhance light load efficiency, the ISL6622 enables diode emulation operation during PSI mode. This allows Discontinuous Conduction Mode (DCM) by detecting when the inductor current reaches zero and subsequently turning off the low side MOSFET to prevent it from sinking current. An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The ISL6622 has a 20kΩ integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt. This driver also has an overvoltage protection feature operational while VCC is below the POR threshold: the PHASE node is connected to the gate of the low side MOSFET (LGATE) via a 10kΩ resistor, limiting the output voltage of the converter close to the gate threshold of the low side MOSFET, dependent on the current being shunted, which provides some protection to the load should the upper MOSFET(s) become shorted.

Features

  • Dual MOSFET Drives for Synchronous Rectified Bridge
  • Advanced Adaptive Zero Shoot-through Protection
  • Integrated LDO for Selectable Lower Gate Drive Voltage (5.75V, 6.75V, 7.75V) to Optimize Light Load Efficiency
  • 36V Internal Bootstrap Diode
  • Advanced PWM Protocol (Patent Pending) to Support PSI Mode, Diode Emulation, Three-State Operation
  • Diode Emulation for Enhanced Light Load Efficiency
  • Bootstrap Capacitor Overcharging Prevention
  • Supports High Switching Frequency
  • 3A Sinking Current Capability
  • Fast Rise/Fall Times and Low Propagation Delays
  • Integrated High-Side Gate-to-Source Resistor to Prevent from Self Turn-On due to High Input Bus dV/dt
  • Pre-POR Overvoltage Protection for Start-up and Shutdown
  • Power Rails Undervoltage Protection
  • Expandable Bottom Copper Pad for Enhanced Heat Sinking
  • Dual Flat No-Lead (DFN) Package
  • Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
  • Pb-Free (RoHS Compliant)

Applications

  • High Light Load Efficiency Voltage Regulators
  • Core Regulators for Advanced Microprocessors
  • High Current DC/DC Converters
  • High Frequency and High Efficiency VRM and VRD

Product Options

Part Number Part Status Pkg. Type Carrier Type MOQ Buy Sample
Active SOICN Reel 2500
Availability
Active DFN Tube 100
Availability
Active DFN Reel 6000
Availability
Last Time Buy SOICN Tube 980
Availability
Last Time Buy SOICN Reel 2500
Availability
Active DFN Tube 100
Availability
Active DFN Reel 6000
Availability

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
ISL6622 Datasheet Datasheet PDF 693 KB
User Guides & Manuals
ISL6334EVAL1Z User Guide Manual PDF 2.35 MB
Application Notes & White Papers
Five Easy Steps to Create a Multi-Load Power Solution White Paper PDF 846 KB
AN1681: Grounding Techniques Application Note PDF 509 KB
AN1684: Nonideality of Ground Application Note PDF 397 KB
AN1116: CMOS Applications Information Application Note PDF 576 KB
PCNs & PDNs
PCN14036 - Wafer fabrication Site Change for Listed Intersil Products - Palm Bay, Florida Product Change Notice PDF 294 KB
PCN13026 - Alternate Manufacturing Site for Assembly of the Listed Intersil SOIC Packaged Products - Amkor Technology, Philippines (ATP) Product Change Notice PDF 77 KB
PCN13013 - Test Site Change for the Listed Intersil Products - Carsem (CAS) Ipoh Malaysia Product Change Notice PDF 207 KB
PCN13025 - Alternate Bond Wire Material and Manufacturing Facilities for Assembly of the Listed Intersil DFN/QFN Packaged Products - Advanced Semiconductor Engineering (ASECL) - Chung-Li , Taiwan and STATS ChipPAC (SCM) - Kuala Lumpur, Mal Product Change Notice PDF 106 KB
PCN13009 - Alternate Bond Wire Material and Manufacturing Facilities for Assembly of the Listed Intersil DFN/QFN Packaged Products - Advanced Semiconductor Engineering (ASECL) - Chung-Li (ASECL), Taiwan and STATS ChipPAC (SCM) - Kuala Lump Product Change Notice PDF 173 KB
PCN12068 - SOIC w/ Copper Bond Wire @ ASECL as Alternate Assembly Site Product Change Notice PDF 108 KB
PCN10055 - Alternate Bond Wire Material for Assembly of the Listed Intersil DFN/QFN Packaged Products - STATS ChipPAC Malaysia Product Change Notice PDF 248 KB
PCN10004 - Alternate Manufacturing Site for the Listed Intersil ISL6622* and ISL6622A* Products - STATS ChipPAC Malaysia Product Change Notice PDF 48 KB
Other
PLC20016 - End of Life Notice Product Life Cycle Notice PDF 220 KB
PLC18018 - General Q3 Product Life Cycle Notice Product Life Cycle Notice PDF 388 KB
TB363: Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs) Other PDF 293 KB
PA16061 - Introduce New T-type End Plug for n-SOIC rail (packing tube) Product Advisory PDF 106 KB