Features

  • Trench gate and thin wafer technology (G8H series)
  • Built in fast recovery diode in one package
  • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
  • Quality grade: Standard
  • High-Speed switching
  • Non-specification for short circuit
  • Applications: UPS, Welding, photovoltaic inverters, Power converter system

Product Options

Part Number Part Status Pkg. Type Carrier Type Buy Sample
RBN50H65T1FPQ-A0#CB0
Package Info
 Active TO-247A Tube
Availability
Buy / Quote

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
RBN50H65T1FPQ-A0 Datasheet – Datasheet PDF 163 KB
Application Notes & White Papers
Attention of Handling Semiconductor Devices 日本語 Application Note PDF 648 KB
TO-247plus Package 日本語 Application Note PDF 506 KB
Usage Notes for Paralleled IGBT 日本語 Application Note PDF 941 KB
IGBT Application Note 日本語 Application Note PDF 1.05 MB
Other
Analog ICs Brochure 日本語 Brochure PDF 4.20 MB
Discrete & Power Devices Brochure – Brochure PDF 3.72 MB
Renesas Semiconductor Lead-Free Packages – Brochure PDF 1.32 MB
info: For device-specific or order-specific documentation, submit a support request.