Features

  • Optimized for current resonance application
  • Low collector to emitter saturation voltage VCE(sat) = 1.45 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 °C)
  • Built in fast recovery diode in one package
  • Trench gate and thin wafer technology

Product Options

Part Number Part Status Pkg. Type Carrier Type Buy Sample
RJH65T14DPQ-A0#T0
Active TO-247A Tube
Availability

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
RJH65T14DPQ-A0 Data Sheet Datasheet PDF 290 KB
Application Notes & White Papers
Attention of Handling Semiconductor Devices 日本語 Application Note PDF 648 KB
TO-247plus Package 日本語 Application Note PDF 506 KB
Usage Notes for Paralleled IGBT 日本語 Application Note PDF 941 KB
IGBT Application Note 日本語 Application Note PDF 1.05 MB
Downloads
RJH65T14DPQ-A0 SPICE Data Model ZIP 2 KB
RJH65T14DPQ-A0 SPICE Data Model ZIP 2 KB
Other
Analog ICs Brochure 日本語 Brochure PDF 4.20 MB
Discrete & Power Devices Brochure Brochure PDF 3.72 MB
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB