Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 150 A, VGE = 15 V, Tc = 25°C)
  • High-Speed switching
  • Short circuit withstands time (10 μs min.)

Product Options

Part Number Part Status Pkg. Type Carrier Type Buy Sample
RJP1CS07DWS-80#W0
Active Sawn
Availability

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
RJP1CS07DWA / RJP1CS07DWS(1250V - 150A - IGBT Application: Inverter) Datasheet PDF 110 KB
Application Notes & White Papers
Attention of Handling Semiconductor Devices 日本語 Application Note PDF 402 KB
TO-247plus Package 日本語 Application Note PDF 506 KB
Usage Notes for Paralleled IGBT 日本語 Application Note PDF 941 KB
IGBT Application Note 日本語 Application Note PDF 1.05 MB
Other
Analog ICs Brochure 日本語 Brochure PDF 4.20 MB
Discrete & Power Devices Brochure Brochure PDF 3.72 MB
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB