Features
- Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 10 A, VGE = 15 V, Tc = 25°C)
- High-Speed switching
- Short circuit withstands time (10 μs min.)
| Title | language | Type | Format | File Size | Date | |
|---|---|---|---|---|---|---|
| Datasheets & Errata | ||||||
| RJP1CS10DWA / RJP1CS10DWS(1250V - 10A - IGBT Application: Inverter) | – | Datasheet | 153 KB | |||
| Application Notes & White Papers | ||||||
| Attention of Handling Semiconductor Devices | 日本語 | Application Note | 648 KB | |||
| TO-247plus Package | 日本語 | Application Note | 506 KB | |||
| Usage Notes for Paralleled IGBT | 日本語 | Application Note | 941 KB | |||
| IGBT Application Note | 日本語 | Application Note | 1.05 MB | |||
| Other | ||||||
| Analog ICs Brochure | 日本語 | Brochure | 4.20 MB | |||
| Discrete & Power Devices Brochure | – | Brochure | 3.72 MB | |||
| Renesas Semiconductor Lead-Free Packages | – | Brochure | 1.32 MB | |||