Overview

Description

The RJP1CS23DWA 1250V, 30A, trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in an Unsawn wafer package type.

Features

  • Renesas generation 7th Trench IGBT
  • Low collector to emitter saturation voltage VCE(sat) = 1.55V typ. (at IC = 30A, VGE = 15V, Tc = 25 °C)
  • Moderate speed switching
  • Short circuit withstands time (10μs min.)

Comparison

Applications

Applications

  • Inverters

Documentation

Design & Development

Models