Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
  • Isolated package
  • Trench gate and thin wafer technology (G7H series)
  • High-Speed switching
  • Operation frequency (50Hz ≤ f ˂ 20kHz)
  • Not guarantee short circuit withstand time

Product Options

Part Number Part Status Pkg. Type Carrier Type Buy Sample
RJP65T54DPM-A0#T2
Active TO-3PFP
Availability

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
RJP65T54DPM-A0 Data Sheet (650V - 30A - IGBT Application: Partial switching circuit) Datasheet PDF 520 KB
Application Notes & White Papers
Attention of Handling Semiconductor Devices 日本語 Application Note PDF 402 KB
TO-247plus Package 日本語 Application Note PDF 506 KB
Usage Notes for Paralleled IGBT 日本語 Application Note PDF 941 KB
IGBT Application Note 日本語 Application Note PDF 1.05 MB
Other
Analog ICs Brochure 日本語 Brochure PDF 4.20 MB
Discrete & Power Devices Brochure Brochure PDF 3.72 MB
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB