The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.
- Low on-state resistance
RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A)
RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A)
- 2.5 V drive available
- Avalanche capability ratings