The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.

Features

  • Low on-state resistance
    RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A)
    RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A)
    RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A)
  • 2.5 V drive available
  • Avalanche capability ratings

Product Options

Part Number Part Status Pkg. Type Carrier Type Buy Sample
2SJ687-ZK-E1-AY
Active MP-3ZK Embossed Tape
Availability

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
2SJ687 Data Sheet Datasheet PDF 270 KB