The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A)
RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A)
The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Title | Other Languages | Type | Format | File Size | Date | |
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Datasheets & Errata | ||||||
2SK3812 Data Sheet | – | Datasheet | 270 KB |