The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Low on-state resistance
RDS(on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A) - Low input capacitance
Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V) - High current
ID(DC) = ±100 A - RoHS Compliant