The N0607N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance
    RDS(on) = 8.4 mΩ max. ( VGS = 10 V, ID = 32.5 A )
  • Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V )
  • High current : ID(DC) = ±65A
  • RoHS Compliant
  • Quality Grade : Standard

    • Product Options

    Part Number Part Status Pkg. Type Carrier Type Buy Sample
    N0607N-ZK-E1-AY
    Package Info
    		 Active TO-252 Embossed Tape
    Availability
    Buy / Quote

    Documentation & Downloads

    Title Other Languages Type Format File Size Date
    Datasheets & Errata
    N0607N Datasheet – Datasheet PDF 661 KB
    info: For device-specific or order-specific documentation, submit a support request.