The ISL73033SLHEV1Z evaluation board is used to evaluate the performance of the ISL73033SLH radiation hardened Driver-GaN power stage. The ISL73033SLH integrates a 4.5V gate driver and a 100V, 7.5mΩ enhancement-mode Gallium Nitride FET (eGaN FET) in a single 8mm x 8mm BGA package. The device simplifies the printed circuit board (PCB) layout by integrating a driver plus GaN FET in one package and is designed for boost and isolated DC/DC converter topologies. The driver operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting logic drives with a single device.
The ISL73003SLHEV1Z evaluation board is configured as a common-source open drain 100V current sense load switch with three on board 2512 sized 220mΩ resistors in parallel (73.3mΩ).
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Type | Title | Date |
Manual - Development Tools | PDF 838 KB | |
Datasheet | PDF 467 KB | |
2 items
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Buy / Sample |
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ISL73033SLHEV1Z circleActive Samples Available |
Get Samples, |