概要

説明

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

特長

  • High endurance capability against to the short circuit.
  • Built-in the over temperature shut-down circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • Low on-resistance RDS: 22 mΩ Typ, 27 mΩ Max (VGS = –10 V)
  • AEC-Q101 Compliant

製品比較

アプリケーション

ドキュメント

設計・開発

モデル