概要

説明

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

特長

  • Logic level operation (5 to 6 V Gate drive).
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Temperature hysteresis type.
  • High density mounting
  • Power supply voltage applies 12 V and 24 V.

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