概要

説明

The RBN40H125S1FPQ-A0 1250V, 40A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.

特長

  • Trench gate and thin wafer technology (G8H series)
  • Built-in fast recovery diode in one package
  • Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 40A, VGE = 15V, Ta = 25 °C)
  • Quality grade: Standard
  • High-speed switching
  • Short circuit withstands time (10µs min.)

製品比較

アプリケーション

アプリケーション

  • UPS
  • Welding
  • Photovoltaic inverters
  • Power converter systems

ドキュメント

設計・開発

モデル