概要

説明

The RJP1CS10DWS 1250V, 10A insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in a Sawn wafer package type.

特長

  • Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 10A, VGE = 15V, Tc = 25 °C)
  • High-Speed switching
  • Short circuit withstands time (10μs min.)

製品比較

アプリケーション

アプリケーション

  • Inverters

ドキュメント

設計・開発

モデル