Renesas' GaN FET Drivers are designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated and non-isolated topologies.
GaN FET Drivers
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| Output Type | Supply Voltage (V) | Gate Drive (V) | ISOURCE (Max) (mA) | ISINK (Max) (mA) | Turn-Off Prop Delay (ns) | Turn-On Prop Delay (ns) | Lead Count (#) | Pkg. Type | |
|---|---|---|---|---|---|---|---|---|---|
| Low-Side GAN FET Driver with Programmable Source Current and Adjustable Overcurrent Protection | Low Side | 6.5 - 18 | 5.8 | 2000 | 3000 | 20 | 20 | 16 | QFN |
