The RJH65T14DPQ-A0 650V, 50A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for induction heating and microwave oven applications. It is available in a TO-247A package type.
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Pkg. Type |
Carrier Type |
购买 / 样片 |
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器件号 | |||
TO-247A | Tube | 获取样片, |