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Renesas' insulated gate bipolar transistor (IGBT) product series for power factor correction (PFC) are recommended for 50kHz to 100kHz frequencies. These IGBTs are ideal for universal power supplies (UPS), solar power generation and welding applications.
Generation | Series | Features |
---|---|---|
G7H | 65T5x series | 650V IGBT for partial switching PFC, ultra-low VCE(sat), not guaranteed against short circuits, frequency: 100kHz or higher |
G7H | 65T4x series | 650V IGBT for full switching PFC, ultra-high-speed switching, not guaranteed against short circuits, frequency: 20kHz or higher |
G6H | 60Fx Series | This series is not supported for new designs. Please use the 65T4x Series of products instead. 600V IGBT, low VCE(sat), not guaranteed against short circuits, frequency: 10kHz to 35kHz |
G6H | 60Dx Series | This series is not supported for new designs. Please use the 65T4x Series of products instead. 600V IGBT, low VCE(sat), tsc ≥3µs, frequency: 10kHz to 20kHz |
Main Use (Proportion) | Circuit Type (Proportion) | Package | Load Short Circuit | Current Rating | Characteristics | Diode | Product Series |
---|---|---|---|---|---|---|---|
Standard model | Partial switching *Other: 5% |
TO-3PF | Unnecessary | 25A to 30A | Ultra-low frequency >100Hz | Unnecessary | G7H T5 Series 30A: RJP65T54DPM |
Mid-to-high models | Full switching *Other: 4% |
TO-247 | Unnecessary | 20A to 45A | Ultra-high-speed turn-off | Unnecessary | G7H T4 Series 20A: RJP65T43DPM 40A: RJH65T46DPQ 45A: RJH65T47DPQ |
Part Number | VCES (V) |
VGES (V) |
IC (A) | IC(peak) | VCE(sat) (V) |
Tj max (C) |
Package | |
---|---|---|---|---|---|---|---|---|
25 °C | 100 °C | (A) | ||||||
RJP65T54DPM | 650 | ±30 | 60 | 30 | 200 | 1.35 (30A) |
175 | TO-3PF (isolated) |
RJP65T14DPQ-A0 | 650 | ±30 | 100 | 50 | 120 | 1.4 (30A) |
175 | TO-247 (non-isolated) |
Competitor's IGBT | 600 | ±20 | 80 | 40 | 100 | 1.5 (30A) |
175 | TO-247 (non-isolated) |
Part Number | VCES (V) |
VGES (V) |
IC (A) | VCE(sat) (V) |
Tj max (°C) |
Package | ||
---|---|---|---|---|---|---|---|---|
25 °C | 100 °C | |||||||
RJP65T43DPM | 650 | ±30 | 40 | 20 | 1.8 (20A) |
175 | TO-3PFM (isolated) |
|
RJH65T46DPQ-A0 | 650 | ±30 | 80 | 40 | 1.8 (40A) |
175 | TO-247 (non-isolated) |
|
RJH65T47DPQ-A0 | 650 | ±30 | 90 | 45 | 1.8 (45A) |
175 | TO-247 (non-isolated) |
|
Company B | 650 | ±20 | 80 | 40 | 1.9 (40A) |
175 | TO-3PN (non-isolated) |
To inquire about sample availability, contact a Renesas sales office or sales representative.
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Type | Title | Date |
Brochure | PDF 1.92 MB | |
Application Note | PDF 506 KB 日本語 | |
Application Note | PDF 941 KB 日本語 | |
Application Note | PDF 1.05 MB 日本語 | |
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Renesas IGBT products Line-up