概要

RAA241200は、様々なバッテリ保護および管理機能を実現するルネサスのリチウムイオン・バッテリ残量管理IC(FGIC)です。複数の低消費電力モードを持ち、超低消費電力動作で高いパフォーマンスを実現できるルネサスRL78 CPUコアと、様々なバッテリ管理機能を内蔵した製品です。 RAA241200は、制御ファームウェアを内蔵フラッシュメモリに格納し、内蔵されたアナログ回路およびデジタル回路を制御して、電池の電圧／電流／温度測定、残量推定、過電流／電圧／温度保護などの電池管理動作を実行することができます。

RAA241200GBM Functional Diagram
RAA241200GBM Functional Diagram
  • Fully integrated battery management solution with battery capacity measurement and programmable protection capability
  • Supports single-cell Li-ion or Li-polymer battery cell
  • Integrated with Renesas' ultra-low power RL78 CPU core for multi-function process.
  • Memory
    Code flash memory: 64KB
    Data flash memory (up to 100,000 erase/write cycles): 4KB
    SRAM: 4KB
  • Clock generator
    High-speed on-chip oscillator: up to 8MHz
    Low-speed on-chip oscillator: 15kHz
    AFE high-speed on-chip oscillator: 2.097MHz
    AFE low-speed on-chip oscillator: 131.072kHz
  • General-purpose I/O ports
    Total: 7 pins
    CMOS input/output: 3, CMOS input: 1
    N-Ch open-drain input/output [6V tolerance]: 3
  • Serial interface
    I2C: 1 channel
    UART: 1 channel
    Simplified I2C: 1 channel
  • Timer
    16-bit timer: 4 channels
    12-bit interval timer: 1 channel
    Real-time clock: 1 channel
    Watchdog timer: 1 channel
    AFE timer: 2 channels
      AFE timer A: Setting range: 125ms to 64s
      AFE timer B: Setting range: 61µs to 2s
  • Embedded A/D converter
    AFE 18-bit resolution sigma-delta A/D converter
      Automatic measurement mode
      Battery cell voltage, internal voltage, and temperature (AN port voltage) detection function without controlling from firmware
  • Current integration circuit
    18-bit resolution sigma-delta A/D converter
  • Impedance measurement circuit
    Simultaneous measurement of battery voltage and current
  • Overcurrent detection/wake-up current detection circuit
    Discharge short-circuit current detection
    Charge overcurrent detection
    Discharge overcurrent detection
    Charge wakeup current detection
    Discharge wakeup current detection
  • Cell voltage detection circuit
    Overvoltage detection
    Undervoltage detection
  • Charge and discharge MOSFET control
    Supports low-side N-Ch MOSFET control
  • Charger connect detection circuit
    Designated charger detection pin when charge FET is off
  • Ultra-low power consumption
    Shutdown mode current: 0.1µA (typ.)
    Sleep mode 1 current: 10µA (typ.) (protection enable)
    Normal mode current: 2mA (typ.) (protection and gauging enable, MCU always on)
    Average current under typical operating conditions: 80µA (typ.)
    (protection and gauging enable)
  • Voltage and temperature condition
    Power supply voltage: VDD = 2.0V to 5.5V
    Operating ambient temperature TA = -40 °C to +85 °C
  • Package information
    16-pin WLBGA
    ([Body] 1.871mm x 2.478mm (TYP.) , 0.5mm pitch)

ドキュメント

= ピックアップ
分類 タイトル 日時
データシート
RAA241200 Data sheet
PDF 724 KB
カタログ
Power Products Brochure
PDF 8.73 MB
カタログ
産業用パワーマネジメント　カタログ
PDF 5.63 MB 英語
パンフレット
[パンフレット] ルネサス開発環境 フラッシュ書き込みツール PG-FP6
PDF 600 KB 英語 , 简体中文
4 items

設計・開発

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    Processing table
    Pkg. Type
    Moisture Sensitivity Level (MSL)
    ご購入 / サンプル
    型名
    RAA241200A20GBM#HC0
    circleアクティブ
    memory
    view_in_ar
    		WLBGA16 3
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